InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices

Abstract

The growth of the antimony-rich dilute nitride alloys GaSbN, InGaSbN, and InGaAsSbN on GaSb substrates by solid-source molecular-beam epitaxy is reported. Bulk GaSbN layers are characterized by x-ray diffraction and the nitrogen incorporation is estimated to be close to 1%. A nitrogen-induced redshift of the photoluminescence peak wavelength as large as 110 meV is observed in In.15Ga.85Sb1−xNx/GaSb quantum wells. Photoluminescence emission at 77 K for an In0.3Ga0.7As0.1Sb0.9−xNx/Al0.25Ga0.75As0.02Sb0.98 multiple quantum well structure shows a 66 meV redshift due to nitrogen incorporation (2.33 μm emission wavelength), demonstrating the potential of this compound for midinfrared optoelectronic device applications.