Electronics Letters · 1990 · 44 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsOptoelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesOptoelectronic DevicesPhotodetectorsPhotonic Integrated CircuitsSemiconductor HeterostructuresSemiconductor PhysicsHeterojunction Bipolar TransistorsHeterostructure DevicesHeterostructure OptoelectronicsHeterostructure PhotodetectorsHigh-speed PhotodetectionIntegrated PhotodetectorsPhotodetector BandwidthPhotodiodes
Heterojunction bipolar transistors have been monolithically integrated with a pin photodetector to realise a high speed transimpedance photoreceiver. The OEIC, made from MOVPE-growth InP/InGaAs heterostructures, had a bandwidth of 2.8 GHz with a transimpedance of 750 Ω. It was successfully operated at 4 Gbit/s with a sensitivity of −21 dBm at a wavelength of 1.5 μm.