Publication | Closed Access
Be doping of (311)A and (100) Al0.24Ga0.76As grown by molecular beam epitaxy
13
Citations
0
References
1996
Year
Aluminium NitrideOptical MaterialsEngineeringOptoelectronic DevicesSemiconductorsElectronic DevicesQuantum MaterialsMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorP-type DopantMaterials EngineeringMaterials SciencePhotoluminescencePhysicsHigh MobilityOptoelectronic MaterialsGallium OxideCrystallographyApplied PhysicsMultilayer HeterostructuresOptoelectronics
The use of Be as a p-type dopant in AlxGa1−xAs and in modulation doped heterostructures grown by molecular beam epitaxy on (311)A oriented substrates is investigated. Photoluminescence and electrical measurements reveal that Be is incorporated as an acceptor in (311)A oriented AlxGa1−xAs with a slightly greater efficiency than in (100) oriented AlxGa1−xAs. The optical properties of the (311)A samples are better than those of the (100) oriented samples. An estimate of the Be binding energy yields 32±4 meV at x=0.240±0.004. A two-dimensional hole gas with a very high mobility (250 000 cm2/Vs at 100 mK) and with clear fractional quantum hall effect is formed in the modulation of Be doped heterostructures grown on the (311)A orientation.