Role of extended defected SiC interface layer on the growth of epitaxial graphene on SiC - Concepedia

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Role of extended defected SiC interface layer on the growth of epitaxial graphene on SiC

19

Citations

14

References

2010

Year

J.H. Park, W. C. Mitchel, L. Grazulis, Kurt G. Eyink, H. E. SMITH, J. E. Hoelscher

Materials ScienceGraphene NanomeshesEpitaxial GrapheneEngineeringApplied PhysicsGrapheneGraphene Nanoribbon

References

	Year	Citations

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