Exploratory search for improved oxidizing agents used in the reduction of surface leakage currents of CdZnTe detectors

Abstract

We have studied the ability of different oxidizing agents, other than H<SUB>2</SUB>O<SUB>2</SUB> to reduce the surface leakage current of CdZnTe devices. All chemical treatments were performed in aqueous solutions, at room temperature, with weight percent concentrations of 2.5g/25ml. Before and after I-V curves were obtained. It was found that by increasing the basicity of the chemical treatment, greater reduction in surface leakage current occurred. The result show that these alternative chemical treatments reduced the surface leakage current as well as or better than H<SUB>2</SUB>O<SUB>2</SUB> chemical treatment.