Donorlike excited states of the thermally induced 0.767-eV (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>P</mml:mi></mml:math>line) defect in oxygen-rich silicon

Abstract

Photoluminescence-excitation spectroscopy with a KCl: Tl color-center laser is performed on the thermally induced defect in oxygen-rich silicon which emits the 0.767-eV ($P$) no-phonon line. We find two sets of excited states. One set 20-30 meV above the $P$ transition is identified with effective-mass-like electron states of a pseudodonor. The ionization energy of the pseudodonor electron is 34.3 meV and the binding energy of the strongly localized hole amounts to 368.2 meV. The other set \ensuremath{\simeq} 65 meV above the $P$ transition is due to anti-Stokes local modes of the excited defect, and one further line possibly originates from an excited state of the deeply bound hole.