High temperature excitonic lasing characteristics of randomly assembled SnO2 nanowires

Abstract

The lasing characteristics of randomly assembled SnO2 nanowires, whose excitonic gain is attributed to the exciton states bounded to the surface defects, are studied from room temperature up to 500 K. It is found that the amount of excited carriers under the lasing conditions is well below the Mott density of SnO2 so that high pumping intensities have less influence on the radiative recombination mechanism and wavelength of the lasing peaks. Furthermore, the redshift of lasing peaks is mainly due to the reduction of bandgap energy of SnO2 with the increase of temperature.