Heat treatment of ion implanted GaAs

Abstract

Abstract Rutherford backscattering, electron spectroscopy (ESCA) and transmission electron diffraction have been used to analyse SiO2 or Si3N4 encapsulated GaAs specimens, heat treated at 600°C or 750°C. The nitride layer is found to be the better of the two encapsulants as it inhibits oxygen in diffusion and the formation of β-Ga2O3. Lattice damage caused during ion implantation is found to enhance the formation of Ga2O3 in specimens encapsulated with SiOz, and it is concluded that after heat treatment of these specimens, oxygen may be the dominant impurity.