Ultra-low voltage, ultra-small mode volume silicon microring modulator

Abstract

We show GHz modulation in a 2.5 microm radius silicon micro-ring, with only 150 mV peak-peak drive voltage and an electro-optic modal volume of only 2 microm(3). The swing voltage and the micro-ring modulator are the smallest demonstrations so-far in silicon. The presented approach lays the ground work for a new class of high speed low voltage modulators enabling, seamless integration of nanophotonics with low voltage digital CMOS nano-electronics.