Optical centers introduced in boron-doped synthetic diamond by near-threshold electron irradiation

Abstract

Near-threshold irradiation of B-doped synthetic diamonds has been performed using a transmission electron microscope operated at 200 kV. Both chemical vapor deposited and high-pressure high-temperature synthesized samples have been studied. The B levels were in the range 1017–1019 cm−3. After irradiation the samples were studied by low temperature (∼7 K) photoluminescence spectroscopy using various excitation wavelengths. A number of characteristic optical centers have been observed in the spectral range 500–800 nm and these centers are reviewed. Details of the properties of the optical centers have been investigated and the results are summarized. In particular, two zero-phonon lines (ZPLs) at 636 and 666 nm, formed in boron-doped diamond materials after near displacement-threshold electron radiation damage, were found to be related. The nature of this relationship is studied by laser power dependence (at different wavelengths) of their intensities over a wide temperature range. The results are interpreted in terms of a three-level model for a single optical center that involves a dipole-forbidden excited state of lower energy and a dipole-allowed state of 90 meV higher energy. Similar behavior of a further pair of ZPLs at 650 and 668 nm also formed in these materials is discussed. The spatial distribution of centers and their alteration by ultraviolet excitation was used to investigate the nature of the 636 and 666 nm centers.