Deep donor state of vanadium in cubic silicon carbide (3C-SiC)

Abstract

Electron spin resonance (ESR) of silicon-substitutional vanadium in its neutral V4+Si (3d1) state has been observed in cubic bulk 3C-SiC single crystals. By photo-ESR the position of the (0/+) deep donor level of vanadium could be located at EV+1.7 eV. Using this level as common reference in 3C-SiC and 6H-SiC, the valence-band discontinuity in the 3C-SiC/6H-SiC interface is predicted as ΔEV=0.1 eV, with the valence band of 3C-SiC lying lower in energy. We also offer an explanation for the absence of intra-3d-shell infrared luminescence of V4+ (3d1) in 3C-SiC.