Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors - Concepedia

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Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors

35

Citations

11

References

2003

Year

Jeonghyun Hwang, W. J. Schaff, Bruce M. Green, Ho‐Young Cha, L.F. Eastman

Solid-State Electronics

Aluminium NitrideElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceAln Passivation LayerMolecular Beam Epitaxy

References

	Year	Citations

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