Concepedia

Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors

M. A. Kastner, David Adler, H. Fritzsche

Physical Review Letters · 1976 · 1.3K citations · 11 references

Concepts

Abstract

A model is presented for the structure and properties of active centers in lone-pair semiconductors, based on the possibility of unique bonding configurations which can arise from the presence of nonbonding orbitals. It is shown that the lowest-energy neutral center is unstable towards the creation of different positively and negatively charged centers, thus resulting in a negative effective correlation energy. These centers yield gap states which explain the unusual properties of lone-pair semiconductors.

References

11

States in the Gap in Glassy Semiconductors

R. A. Street, N. F. Mott · Physical Review Letters · 1975

+17

1K citations

States in the gap and recombination in amorphous semiconductors

N. F. Mott, E. A. Davis, R. A. Street · Philosophical magazine · 1975

821 citations

Luminescence in amorphous semiconductors

Advances In Physics · 1976

409 citations