Low loss optical ridge waveguides in a strained GeSi epitaxial layer grown on silicon

Abstract

The realisation of single-mode ridge waveguides in a strained Si1−xGex epitaxial layer grown on silicon by MBE is reported. Measurements at λ = 1.3μm yield a refractive index enhancement of 2.2 × 10−3 for x = 0.01 and waveguide losses around 3–5 dB/cm.