Optical Properties of Indium-Doped Silicon

Abstract

Absorption and photoconduction have been studied in indium-doped silicon at low temperatures. The optical properties indicate a level at about that obtained from thermal-resistivity measurements, i.e., 0.16 ev. Sharp absorption lines are observed at 20\ifmmode^\circ\else\textdegree\fi{}K which broaden and essentially disappear by 77\ifmmode^\circ\else\textdegree\fi{}K.