Journal of Applied Physics · 1969 · 165 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials PhysicsSemiconductor MaterialsOptical Properties Of SemiconductorsPhotodetectorsPhotovoltaic MaterialsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand Gap DeterminationBand Gap EnergyEnergy Band GapEnergy Gap AnalysisMercury Cadmium TelluridePhotoconductive Infrared DetectorsPhotovoltaic Infrared DetectorsSemiconductor Band Gap Determination
The temperature and compositional dependences of the energy gap are determined for the alloy semiconductor mercury-cadmium telluride (Hg1−xCdxTe). The cutoff wavelength was measured on photoconductive and photovoltaic infrared detectors where 0.17<x<0.60 over a temperature range 20<T< 300°K. Spectral response curves are shown to indicate the precision of the method. The temperature and compositional dependences of the energy gap are shown and the empirical expression Eg (eV) =1.59x−0.25+5.233(10−4)T(1−2.08x)+0.327x3is deduced.
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Interband Magnetoreflection and Band Structure of HgTe
S. H. Groves, Richard N. Brown, C. R. Pidgeon · Physical Review · 1967 · 202 citations
Some Optical Properties of Cadmium Telluride
P.W. Davis, T. S. Shilliday · Physical Review · 1960 · 168 citations