Applied Physics Letters · 1999 · 114 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsNanomaterialsNanotechnologyAtomic Force MicroscopyElectrochemical CellsElectrode MaterialsFerroelectric MaterialsSelf-assembled NanostructuresSelf-assembly Of NanomaterialsFerroelectric PropertiesNanoelectronic Memory DevicesPiezoresponse Force MicroscopySelf-assembling Materials
In this letter, we report on the switching properties of an ordered system of Bi4Ti3O12 ferroelectric memory cells of an average lateral size of 0.18 μm formed via a self-assembling process. The ferroelectricity of these cells has been measured microscopically and it has been demonstrated that an individual cell of 0.18 μm size is switching. Switching of single nanoelectrode cells was achieved via scanning force microscopy working in piezoresponse mode.
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The Physics of Ferroelectric Memories
Orlando Auciello, J. F. Scott, R. Ramesh · Physics Today · 1998 · 1.3K citations
Modification and detection of domains on ferroelectric PZT films by scanning force microscopy
K. Franke, J. Besold, W. Haessler et al. · Surface Science · 1994 · 213 citations