Recombination enhanced dislocation glide in silicon carbide observed in-situ by transmission electron microscopy

Abstract

The recombination enhanced dislocation glide in a 6H-SiC single crystal was studied by in-situ transmission electron microscopy. Electron beam irradiation even at room temperature induced reversible increase in the glide velocity of basal 90-partial dislocations in proportion to the beam intensity. Evidences for enhancement of the double kink formation as well as for the kink migration are presented.