Concepedia

High-dose ion implantation into GaN

S. O. Kucheyev, J. S. Williams, Jin Zou, C. Jagadish, G Li

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2001 · 19 citations · 15 references

Concepts

EngineeringElectrical EngineeringSemiconductor DevicesIon ImplantationIonization ProcessesGallium Nitride (Gan) MaterialsIon Implantation EffectsRadiation-tolerant Semiconductor Devices

References

15

GaN: Processing, defects, and devices

S. J. Pearton, J.C. Zolper, R. J. Shul et al. · Journal of Applied Physics · 1999 · 1.8K citations

Engineering, Materials Engineering, Materials Science +17

Damage buildup in GaN under ion bombardment

S. O. Kucheyev, J. S. Williams, C. Jagadish et al. · Physical review. B, Condensed matter · 2000 · 192 citations

Engineering, Materials Engineering, Materials Science +17

Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization

C. Liu, B. Mensching, M. Zeitler et al. · Physical review. B, Condensed matter · 1998 · 129 citations · Full text

Engineering, Materials Science, Physics +17

Damage to epitaxial GaN layers by silicon implantation

Hark Hoe Tan, J. S. Williams, Jin Zou et al. · Applied Physics Letters · 1996 · 129 citations

Engineering, Materials Engineering, Materials Science +16

Ion-beam-induced dissociation and bubble formation in GaN

S. O. Kucheyev, J. S. Williams, Jin Zou et al. · Applied Physics Letters · 2000 · 80 citations

Engineering, Materials Engineering, Materials Science +17