Thermal effects on the forward characteristics of silicon p-i-n diodes at high pulse currents

The forward characteristic of silicon power rectifiers at high current densities

A. Herlet · Solid-State Electronics · 1968 · 173 citations

Engineering, Electrical Engineering, Materials Science +15

The High Current Limit for Semiconductor Junction Devices

Neville H. Fletcher · Proceedings of the IRE · 1957 · 128 citations

Engineering, Electrical Engineering, Microelectronics +15

On the effective carrier lifetime in p-s-n rectifiers at high injection levels

Heinrich Schlangenotto, W. Gerlach · Solid-State Electronics · 1969 · 92 citations

Engineering, Electrical Engineering, Materials Science +15

P+IN+ silicon diodes at high forward current densities

Nathan Howard, Grant Johnson · Solid-State Electronics · 1965 · 75 citations

Engineering, Electrical Engineering, Materials Science +13

The Combination of Resistivities in Semiconductors

Vivian Johnson, K. Lark‐Horovitz · Physical Review · 1951 · 70 citations

Engineering, Materials Science, Physics +10