Technical Physics Letters · 2003 · 38 citations · 2 references
EngineeringElectrical EngineeringPhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsElectron Beam PhysicsIii-v SemiconductorsQuantum ConfinementSemiconductor LasersSemiconductor PhysicsElectron Beam GenerationElectron Beam SourcesElectron Beam TransportElectron SourcesHigh-intensity Electron Beams
We have studied the conditions for the formation of a pulsed beam of runaway electrons in a diode filled with air at atmospheric pressure, whereby the current and voltage pulses in the system were measured with a subnanosecond time resolution. It is experimentally demonstrated for the first time that the electron beam appears on the leading front of the voltage pulse at a relatively small voltage on the discharge gap. At atmospheric pressure, a full width at half maximum of the current pulse does not exceed 0.3 ns.
2