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A new optically read ferroelectric memory
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1967
Year
Optical MaterialsEngineeringWriting OperationFerroelectric Random-access MemoryOptoelectronic DevicesPhase Change MemorySemiconductorsFerroelectric ApplicationOptical PropertiesMemory DeviceOptical SystemsMaterials SciencePhotonicsElectrical EngineeringPhysicsElectronic MemoryPhotonic MaterialsUnique SwitchingOptoelectronicsOptical MemoryApplied PhysicsFerroelectric MaterialsSemiconductor MemoryOptical System AnalysisRead Ferroelectric Memory
The optically read ferroelectric memory described utilizes nondestructive optical reading made possible by the unique switching and optical properties of single-crystal ferroelectric bismuth titanate (Bi <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> Ti <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</inf> ). The use of known photoconductor access techniques for the writing operation in conjunction with Bi <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> Ti <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</inf> crystals provides a completely optically accessed ferroelectric memory.