Low‐temperature chemical vapor deposition of indium sulfide thin films using a novel single‐source indium thiocarboxylate compound as precursor

Abstract

The optoelectronic properties of gallium and indium chalcogenides have attracted considerable attention in recent years. This paper describes the synthesis and characterization of the first monomeric indium thiocarboxylate CVD precursor, with the molecular structure shown in the Figure. This compound has been successfully used to grow high purity, uniform, crystalline β‐In 2 S 3 by aerosol‐assisted CVD at the lowest temperature (210°C) yet reported. magnified image