Ammonothermal Growth of GaN on an over-1-inch Seed Crystal

Abstract

GaN was grown on a 3×4 cm 2 oval-shaped GaN seed crystal by the ammonothermal method. About 15-µm-thick GaN films were uniformly grown on each side of the seed. The Ga-polar surface was filled with pits whereas the N-polar surface was featureless. The photoluminescence (PL) characterization also indicated qualitatively uniform optical properties on each side of the crystal. The PL emission from the Ga-face was dominated by the yellow luminescence whereas that from the N-face showed dominant band-edge emission. These preliminary characterization indicated qualitatively uniform growth of GaN on an over-1” seed and demonstrated the scalability of the ammonothermal method.