Applied Physics Express · 2015 · 98 citations · 34 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMagnetic MaterialsMaterials PhysicsFerromagnetic MaterialsFerromagnetismMagnetic AnisotropyMagnetic OxidesMagnetic Thin FilmsThin Film Magnetic PropertiesAnisotropy EnergyEnergy Storage ApplicationsInterface AnisotropyMagnetic Anisotropy MeasurementMagnetic Tunnel JunctionsPerpendicular Magnetic AnisotropyTemperature Dependence Of AnisotropyTunnel Junctions
The perpendicular magnetic anisotropy of an Ir/CoFeB/MgO trilayer was investigated after annealing at temperatures ranging from 200 to 350 °C. In the trilayer system annealed at 300 °C, we measured an interface anisotropy energy of 1.9 mJ/m2. Further annealing led to mixing of the buffer and ferromagnet, degrading the properties of the latter. In addition, we show the dependence of the magnetic anisotropy on the bias voltage. The presented system is important for the development of perpendicular magnetic tunnel junctions for storage applications.
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Current-induced magnetization reversal in nanopillars with perpendicular anisotropy
S. Mangin, D. Ravelosona, J. A. Katine et al. · Nature Materials · 2006 · 1.3K citations · Full text
Electric Field-Induced Modification of Magnetism in Thin-Film Ferromagnets
Martin Weisheit, S. Fähler, A. Marty et al. · Science · 2007 · 1.2K citations