Electronics Letters · 2002 · 16 citations · 1 references
EngineeringComputer EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesAnalog Integrated CircuitsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyCurrent-voltage CharacteristicsIntegrated Circuit DesignNoise In Electronic DevicesCmos Analog Circuit DesignCmos Analog Integrated CircuitsCmos Digital Circuit DesignEquivalent Oxide ThicknessLow-power Cmos DesignLow-voltage Cmos DesignProcess Parameter EffectsReference Voltage Design
A precision, CMOS current generation circuit, using no external components, which is independent of temperature and supply voltage, is described. The only process parameter which affects it is the oxide thickness, which, typically, varies less than +/−10%. The operation utilises charging an on-chip capacitor within a clock defined time period by a feedback controlled current to a reference voltage. The clocking noise is effectively isolated from the output by three orders of magnitude.
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