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Island Size Scaling in InAs/GaAs Self-Assembled Quantum Dots
83
Citations
15
References
1998
Year
Materials ScienceIi-vi SemiconductorEngineeringPhysicsNanoelectronicsNanotechnologyQuantum DeviceApplied PhysicsQuantum DotsIsland Size ScalingQuantum Dot DensitiesMolecular Beam EpitaxyCluster Size DistributionEpitaxial GrowthCompound SemiconductorSemiconductor Nanostructures
We studied the cluster size distribution of dislocation-free InAs/GaAs self-assembled quantum dots obtained by the Stranski-Krastanow mode of molecular beam epitaxy. The same scaling function was obtained over a wide range of dot density. The scaling function indicated that the cluster size fluctuation, normalized by the average size, is constant for all the quantum dot densities studied. The resemblance of the scaling function to that of the submonolayer homoepitaxial growth implies that the strain is not the essential factor determining the cluster size distribution of quantum dots.
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