Low‐Temperature Solution‐Processed Hydrogen Molybdenum and Vanadium Bronzes for an Efficient Hole‐Transport Layer in Organic Electronics

Abstract

A simple one-step method is reported to synthesize low-temperature solution-processed transition metal oxides (TMOs) of molybdenum oxide and vanadium oxide with oxygen vacancies for a good hole-transport layer (HTL). The oxygen vacancy plays an essential role for TMOs when they are employed as HTLs: TMO films with excess oxygen are highly undesirable for their application in organic electronics.