Selective growth condition in disilane gas source silicon molecular beam epitaxy

Abstract

Selective epitaxial growth condition in the disilane gas source silicon molecular beam epitaxy was studied as functions of the substrate temperature and the growth rate. At lower substrate temperature or at lower silicon growth rate, perfect selectivity was attained. The selectivity dependence on the temperature and that on the growth rate indicate that the control of the disilane molecule’s dissociation on the SiO2 surface is important for selective growth.