Japanese Journal of Applied Physics · 2007 · 38 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsRadiation DetectionSemiconductor DevicesDetector TechnologyGamma-ray DetectionGamma-ray DetectorsRadiation DetectorsRadiation Imaging DetectorsSemiconductor DetectorsDetector Energy ResolutionGamma-ray Detector ResolutionGamma-ray Detector TechnologyPixel DetectorsRadiation Energy ResolutionSemiconductor Radiation DetectorsSpectral CharacteristicsSpectral Characterization
We developed a new Al Schottky CdTe pixel detector and measured its spectral performance. It has pixelated anodes made of aluminum and a common cathode made of platinum. Because of the low leakage current and the high bias voltage owing to the Schottky diode characteristic and the anode pixel configuration, a good spectral performance including a high energy resolution was achieved. When the pixel detector with a thickness of 0.75 mm was subjected to a bias voltage of 400 V and was operated at -20 °C, the full-width-half-maximum (FWHM) energy resolution of 1.1 and 1.8 keV at 59.5 and 122 keV, respectively, were successfully obtained. The spectral performance obtained with the Al Schottky CdTe pixel detector exceeded that obtained with the conventional In Schottky CdTe pixel detector, which has an In common anode and Pt pixelated cathodes, under the same operating conditions.
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High-resolution Schottky CdTe diode for hard X-ray and gamma-ray astronomy
Tadayuki Takahashi, Biswajit Paul, Kazuyuki Hirose et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1999 · 145 citations · Full text
Natural Sciences, Electrical Engineering, Materials Science +12
Characterization of CdTe/CdZnTe detectors
G. Sato, Tadayuki Takahashi, Masahiko Sugiho et al. · IEEE Transactions on Nuclear Science · 2002 · 50 citations