Controlling the Composition of Doped Materials by ALD: A Case Study for Al-Doped TiO[sub 2] Films

Abstract

This study examined the effect of the process sequence on the composition of doped films grown by atomic layer deposition (ALD) by investigating the passivation effect of one precursor on the chemisorption of another in the subsequent step. Considering that (TTIP) and (TMA) do not react with each other, Al-doped films were grown by ALD through various process sequences. The film thickness was barely affected by modification of the process sequence. However, the process sequence where TTIP exposure was followed by TMA exposure caused a decrease in the Al/Ti ratio in the Al-doped films without altering the Al and Ti precursor cycle ratio, which resulted in an increase in the dielectric constant.