100 Gb/s Operation of an AlGaInAs Semi-Insulating Buried Heterojunction EML

Abstract

A large electro-optic bandwidth Electro-absorption Modulated laser, with a Semi-Insulating AlGaInAs/InP Buried Heterostructure, has been associated with a 100Gb/s InP Heterojunction Bipolar Transistor Multiplexing circuit, exhibiting an open eye diagram.