Thickness dependence of D.C. leakage current in lead zirconate-titanate (PZT) memories

Abstract

Abstract We have measured the voltage (field) dependence, the thickness dependence, and the temperature dependence of d.c. leakage currents in PbZr0.40Ti0.60O3. In agreement with our earlier results [Scott et al., J. Appl. Phys. 70, 382 (1991)], the voltage dependence is given by I(V) = AV + B(V - V 0)2, implying space-charge limited currents. In addition, in the present work we find that I(d) = C/d 3 at constant voltage, where d is the thickness and C is a constant dependent upon voltage and cross-sectional area. This inverse-cubic dependence of current confirms that the leakage is dominated by space charge effects.