High-voltage rf operation of AlGaN/GaN heterojunction FETs

Abstract

This paper reviews the present status of AlGaN/GaN heterojunction FETs for microwave and millimetre-wave applications. The epitaxial structure of the FET and its fabrication process are described. The dc and rf characteristics are also reported, including state-of-the-art power performance at 2 GHz and 30 GHz. The future prospects of GaN-based transistors are also discussed. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)