The Invariance of the Noise Impedance in n-MOSFETs across Technology Nodes and its Application to the Algorithmic Design of Tuned Low Noise Amplifiers

Abstract

The measured noise impedance of MOSFETs is found to be invariant across technology nodes. Together with the invariance of the optimum noise figure current density, JOPT, this allows for optimally noise matched LNAs to be ported without redesign between technology nodes and for a given design to be scaled in frequency. The design porting and frequency scaling are validated experimentally on record low noise LNAs fabricated in 90nm and 130nm CMOS technology.