Behavior of implantation‐induced defects in HgCdTe

Abstract

The characteristics of ion implanted HgCdTe epitaxial layers have been explored. A bimodal distribution in damage near the implanted surface has been correlated with a bimodal distribution in implant‐induced donor concentration. The implant induced junction depth has been found to be controllable and stable under a range of annealing conditions. Differential capacitance measurements have shown that the carrier concentration in the junction region is 10–100 times lower than the as‐grown acceptor concentration in the base material. These and other observations have been qualitatively explained by a model based on the hypothesis that Hg interstitials (or possibly Te vacancies) formed during the implant are donors whose distribution is largely controlled by damage near the layer surface.