Superlattice Structure a-Si Films Fabricated by the Photo-CVD Method and their Application to Solar Cells

Abstract

Amorphous silicon superlattice structure films were fabricated by the photo-CVD method for the first time; also, the structural, optical and electrical properties of the films were investigated. A comparison of the photoluminescence intensities indicated that low damage to the interface was accomplished by using the photo-CVD method. A new type of solar cell was also developed using a superlattice structure as the p-layer of an a-Si solar cell. A conversion efficiency of 10.5% was obtained for a glass/TCO/p-superlattice structure/in/Metal a-Si solar cell.