Large Grain Copper Indium Diselenide Films

Abstract

Large grain thin films of copper indium diselenide with a preferred {112} orientation have been prepared by (i) the deposition of nearly stoichiometric films of copper and indium on suitable substrates using vacuum evaporation or electrodeposition, and (ii) the heat‐treatment of Cu‐In films in a hydrogen‐selenium atmosphere at temperatures above 630°C. The compositional, structural, and electrical properties of the films have been evaluated. In an alternate approach, a copper film on a substrate was first converted into cuprous selenide, followed by the deposition of indium and selenization. The resulting films have the same properties as those from the selenization of Cu‐In films.