Electrostatic Modulation of LaAlO₃/SrTiO₃ Interface Transport in an Electric Double‐Layer Transistor

Abstract

Electrostatic modulation on the two-dimensional transport of the LaAlO3/SrTiO3 interface in an electric double-layer transistor is demonstrated. The induced insulator-to-metal transition exhibits the nature of charge-density-driven percolation, and the Kondo effect governs the low-temperature interface transport under high bias. The results underscore the important role of inhomogeneity and localized spins in the two-dimensional transport of oxide interfaces.