Influence of deep level impurities on modulation response of InGaP light emitting diodes

Abstract

The effect of deep level impurities on static and dynamic properties of InGaP-based light emitters grown by all-solid-source molecular-beam epitaxy is analyzed. The improvement of the output power and the decrease in modulation bandwidth induced by the burn-in process are explained by the recombination enhanced annealing of one deep level trap. This assumption is experimentally proven through comparison of small-signal analysis for resonant cavity light-emitting diodes operating at 650 nm and deep level transient spectroscopy results. Finally, the concentration of the midgap recombination center N3 in the active region is shown to play an important role in the performance of the InGaP devices.