Publication | Closed Access
Rectifying behaviors induced by BN-doping in trigonal graphene with zigzag edges
61
Citations
23
References
2012
Year
EngineeringChemistryPotential BarrierSemiconductorsGraphene NanomeshesHexagonal Boron NitrideTrigonal GrapheneNanoelectronicsBarrier HeightMaterials SciencePhysicsZigzag EdgesQuantum ChemistryBoron AtomGraphene Quantum DotElectronic MaterialsNatural SciencesApplied PhysicsCondensed Matter PhysicsGrapheneGraphene Nanoribbon
Based on nonequilibrium Green’s functions in combination with density-function theory, the transport properties of trigonal graphenes, with the vertex carbon atom substituted by one phosphorus or boron atom and bounded through a B-N pair, coupled to gold electrodes are investigated. The rectification behavior can be observed because a potential barrier similar to the p-n junction is formed in the B-N region of central molecule. When the size of a central molecule is enlarged, rectification ratio is improved greatly since the barrier height in it is enhanced as well.
| Year | Citations | |
|---|---|---|
Page 1
Page 1