Publication | Closed Access
Fabrication and characterization of gated field emitter arrays with self-aligned carbon nanotubes grown by chemical vapor deposition
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Citations
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References
2002
Year
EngineeringCarbon NanotechnologySemiconductor DeviceElectronic DevicesCarbon-based MaterialNanoelectronicsCarbon-based FilmsCarbon NanotubesElectrical EngineeringNanotechnologyNanomanufacturingSemiconductor Device FabricationField Emitter ArraysNanomaterialsApplied PhysicsSelf-aligned Carbon NanotubesMultiwall Carbon NanotubesNanotubesChemical Vapor DepositionTriode Mode
Field emitter arrays with multiwall carbon nanotubes (CNTs) grown inside their gated holes were fabricated on glass substrates. The Fe–Ni–Co alloy catalyst dots on which the CNTs would be grown were deposited into the gated holes by a self-aligned method to maintain a constant distance between CNT emitters and gate electrodes. The CNTs were synthesized by thermal chemical vapor deposition using a gas mixture of CO and H2 at 500 °C. The CNT lengths were controlled by changing ratios of CO to H2. Field emission currents and images were monitored as a function of gate and anode voltages. It was shown that the CNT emitters grown just up to the gate electrode height operated best in a triode mode.
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