Electrical and optical properties of P- and As-doped Cd1−<i>x</i>Mn<i>x</i>Te

Abstract

The introduction of phosphorus and arsenic dopants into bulk Cd1−xMnxTe crystals grown by the Bridgman–Stockbarger technique has been studied with respect to the resulting electrical and optical properties. Uncompensated acceptor concentrations as high as 1015–1016 cm−3 are obtained. Samples with a Mn composition in the range 0.10&amp;lt;x&amp;lt;0.30, both as-grown and annealed, are studied. Hall-effect and resistivity measurements are used to determine carrier concentrations, mobilities, and acceptor activation energies. A combination of room-temperature transmittance and reflectance measurements over the spectral range from the ultraviolet to the far infrared has been used to gain information concerning structural quality and point defects. Low-temperature photoluminescence measurements (1.6–5 K) are used to determine optical quality and excitonic energies. The effect of alloy broadening on luminescence linewidth is calculated and compared with measured values.