A model for the large-amplitude hysteresis in MIS structures on InSb

Abstract

Time-instability measurements of the capacitance-voltage (C-V) characteristics of InSb MIS devices show that the flatband voltage shift follows VG=K (V) log(1+t/τ) and appears to be caused by tunneling of free carriers from the semiconductor surface into insulator traps. The analysis of such a mechanism emphasizes the influence of the semiconductor band-gap width on the values of K for InSb substrates at 77 °K leading to about a 100 times larger instability than silicon sustrates at 300 °K for an equal value of the insulator trap density.