Heavy Metal Gettering in Silicon‐Device Processing

Abstract

Heavy metal gettering in silicon devices has been investigated. The best results have been obtained with predeposition followed by annealing at moderate temperature. A model, previously developed for gold, is applied to the description of heavy metal gettering. Once inserted into a standard device process, our gettering step allows us to obtain leakage currents about 100 pA/cm2 and 1 pA/cm for diodes and storage time around 103 sec for capacitors.