Oscillator strength enhancement for [110]-polarized light in compressively strained GaInP ordered crystals used in AlGaInP lasers

Abstract

This letter studies the effect of compressive strain on the polarization-dependent oscillator strength in GaInP CuPt-type ordered crystals. The hole eigenstates are obtained by diagonalizing the total Hamiltonian consisting of the Hamiltonian for ordered GaInP and a perturbed term caused by the strain. Our calculation reveals that the strain squeezes the hole wave function and that the oscillator strength between an electron and the upper-valence-band hole increases for [110]-polarized light. The oscillator strength for [110]-polarized light increases with the strain, reaching 14% at +0.98% strain.