Interference of polariton waves in structures with wide GaAs/AlGaAs quantum wells

Abstract

The optical reflection spectra of semiconductor GaAs/AlGaAs structures with wide quantum wells are studied experimentally. A theoretical analysis of the spectra is performed in terms of the exciton-polariton model in the approximation of quantum confinement of the exciton center of mass with regard to the contributions of both heavy and light excitons to the crystal polarization. The applicability range of the theory of the center-of-mass confinement for GaAs/AlGaAs heterostructures is estimated. It is established that, for quantum wells more than 180 nm wide, the interference effects observed in the reflection spectra of polariton waves are reproduced, to a good accuracy, by theoretical calculations based on the quantum confinement of the exciton center of mass. For quantum-well widths less than 150 nm, the experimental results are described better by the model of quantum confinement of electrons and holes.