Phosphorus Isoconcentration Diffusion Studies in Silicon

Abstract

32P‐concentration profiles were obtained of diffusions conducted in intrinsic and extrinsic silicon, employing isoconcentration conditions for the latter. All diffusions were conducted in evacuated closed quartz capsules at diffusion temperatures ranging from 950° to 1200°C. The temperature dependence of phosphorus diffusivity in intrinsic and extrinsic silicon is described by the empirical equations and , respectively.