Vacancy Association of Defects in Annealed GaAs

Abstract

Cathodoluminescence measurements were performed at 5 °K on GaAs annealed from 600 to 1100 °C under controlled arsenic vapor pressures. Various energy levels of defects were observed, and their association with Ga or As vacancies were determined from the pressure dependence. The defects associated with Ga vacancies were found to become increasingly important with increasing temperatures. Fast diffusing species such as copper can be ruled out as being responsible for the observed defects.