Stacking-order dependent transport properties of trilayer graphene

Abstract

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of $\ensuremath{\nu}=2,4,6,...$ with a step of $\ensuremath{\Delta}\ensuremath{\nu}=2$, whereas the inversion-symmetric ABC trilayer exhibits plateaus at $\ensuremath{\nu}=6$ and 10 with fourfold spin and valley degeneracy.